Antiradiation static memory cell

Details Antiradiation static memory cell Antiradiation static memory cell

1998-08-11

1999-08-17

Nelms, David

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, G11C 1100

Patent

active

059403187

ABSTRACT:
The present invention relates to a memory cell including two sets each including first and second transistors connected between high and low potentials, the first transistor being a P-channel transistor and the second one an N-channel transistor. Both sets include a third and a fourth N-channel transistor. The third transistor is connected between the high potential and the control electrode of the second transistor. The fourth transistor is connected between the low potential and the control electrode of the second transistor. The drains of the first and second transistors of each set form storage nodes. The sources and drains of the third and fourth transistors form input/output nodes, distinct from the storage nodes.

REFERENCES:
patent: 4852060 (1989-07-01), Rockett, Jr.
patent: 5043939 (1991-08-01), Slamowitz et al.
patent: 5111429 (1992-05-01), Whitaker
patent: 5640341 (1997-06-01), Bessot et al.

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