Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component
Reexamination Certificate
2007-05-12
2010-11-23
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Having selenium or tellurium elemental semiconductor component
C438S095000, C106S001250, C257SE21068, C556S035000
Reexamination Certificate
active
07838329
ABSTRACT:
Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
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Baum Thomas H.
Chen Philip S. H.
Chen Tianniu
Hendrix Bryan C.
Hunks William
Abdelaziez Yasser A
Advanced Technology & Materials Inc.
Chappuis Maggie
Garber Charles D
Hultquist Steven J.
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