Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1992-04-10
1994-07-12
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257529, 257764, H01L 2702
Patent
active
053291530
ABSTRACT:
An antifuse in an integrated circuit which has first and second conducting lines, a semiconductor layer of amorphous silicon between the first and second conducting lines, and a barrier metal layer of TiN between the semiconductor layer and the first conducting layer is disclosed. The TiN layer is nonstoichiometric composition to enhance the probability of said antifuse having a desired resistance when said antifuse is programmed. More specifically, the TiN layer has a composition of Ti.sub.1.0 N.sub.0.5-0.8.
REFERENCES:
patent: 3571673 (1971-03-01), Ovshinsky
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patent: 4458297 (1984-07-01), Stopper et al.
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patent: 4914055 (1990-04-01), Gordon et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5191550 (1993-03-01), Kubota
"Amorphous Silicon Antifuse Technology for Bipolar PROMS" 1986 Bipolar Circuits and Technology Meeting-1986 IEEE pp. 99-100.
Clark Sheila V.
Crosspoint Solutions Inc.
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