Antifuse structure and process for manufacturing the same

Details Antifuse structure and process for manufacturing the same Antifuse structure and process for manufacturing the same

1995-11-01

1997-08-19

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438768, H01L 2170, H01L 2700

Patent

active

056588194

ABSTRACT:
An antifuse may include one or more interfacial oxide film layers surrounding an antifuse dielectric layer to provide narrowing of the antifuse programming voltage distribution and to improve the antifuse yield and long term reliability.

REFERENCES:
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5181096 (1993-01-01), Forouhi
patent: 5210598 (1993-05-01), Nakazaki et al.
patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5272666 (1993-12-01), Tsang et al.
patent: 5300456 (1994-04-01), Tigelaar et al.
patent: 5322812 (1994-06-01), Dixit et al.
patent: 5353246 (1994-10-01), Tsang et al.
patent: 5362676 (1994-11-01), Gordon et al.
patent: 5374832 (1994-12-01), Tung et al.
patent: 5475253 (1995-12-01), Look et al.
V. Jain et al, "Amorphous Silicon Anti-Fuse for High Speed FPGA Application", Conference Proceedings, 5th Annual IEEE Intl. ASIC Conference, pp. 111-113, 1992.

Affiliated with

Also associated with

Rating

Antifuse structure and process for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Antifuse structure and process for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antifuse structure and process for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1104429