Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-01-11
2005-01-11
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S050000, C257S209000, C257S529000, C438S128000, C438S131000, C438S238000, C438S381000, C438S398000, C438S467000
Reexamination Certificate
active
06841846
ABSTRACT:
The present invention comprises an antifuse having a hemispherical grained (HSG) layer and a method of forming antifuse having a hemispherical grained (HSG) layer. The antifuse of the present invention comprises a plurality of layers, the first being a lower electrode that is disposed on an impurity region in a semiconductor substrate. A dielectric layer is disposed on the lower electrode, wherein the dielectric layer has a planar surface. A non-conductive hemispherical grain (HSG) layer is formed on the planar surface of the dielectric layer and an upper electrode is disposed on said non-conductive hemispherical grain (HSG) layer forming the antifuse.
REFERENCES:
patent: 5641985 (1997-06-01), Tamura et al.
patent: 6154410 (2000-11-01), Cutter et al.
patent: 6259130 (2001-07-01), Wu
patent: 6392284 (2002-05-01), Thakur et al.
patent: 6413833 (2002-07-01), Yamamoto
patent: 6440869 (2002-08-01), Tseng
patent: 6458645 (2002-10-01), DeBoer et al.
patent: 6605532 (2003-08-01), Parekh et al.
patent: 20010034096 (2001-10-01), Thakur
patent: 20020025650 (2002-02-01), Thakur et al.
patent: 20030003632 (2003-01-01), Cleeves et al.
patent: 20030113968 (2003-06-01), Thakur
H. Watanabe et al., “An Advanced Technique for Fabricating Hemispherical-Grained (HSG) Silicon Storage Electrodes”,IEEE Transactions On Electron Devices, vol. 42, No. 2, pp. 295-300, Feb. 1995.
Chen Hung-Sheng
Huang Chang-Kai
Tseng Huan-Chung
Actel Corporation
Richards N. Drew
Sierra Patent Group Ltd.
Thomas Tom
LandOfFree
Antifuse structure and a method of forming an antifuse... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Antifuse structure and a method of forming an antifuse..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antifuse structure and a method of forming an antifuse... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3432801