Antifuse load sram cell

Details Antifuse load sram cell Antifuse load sram cell

1996-10-11

1998-06-16

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

257 50, 257530, G11C 1100

Patent

active

057681791

ABSTRACT:
An antifuse functions as a resistive element in an SRAM cell. The antifuse layer, typically amorphous silicon, is formed to a thickness commensurate with the resistance required for proper functioning of the SRAM cell. The antifuse load SRAM cell of the present invention advantageously reduces chip area and simplifies the fabrication process. Specifically, the formation of the amorphous silicon layer is an easily controlled parameter which is therefore easily reproducible. Moreover, antifuse processing is compatible with standard CMOS processing.

REFERENCES:
patent: 5418738 (1995-05-01), Abadeer et al.
patent: 5426614 (1995-06-01), Harward
patent: 5449947 (1995-09-01), Chen et al.
patent: 5475253 (1995-12-01), Look et al.

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