Antifuse element, semiconductor device having antifuse elements,

Details Antifuse element, semiconductor device having antifuse elements, Antifuse element, semiconductor device having antifuse elements,

1994-12-05

1996-10-15

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257528, 257209, H01L 2904, H01L 2710, H01L 2900

Patent

active

055657028

ABSTRACT:
An antifuse element provided on a semiconductor device comprises a bottom electrode, an antifuse material layer, and a top electrode. At least the uppermost portion of the bottom electrode is made of metallic silicide in which the metal composition ratio is set to greater than the stoichiometry composition ratio. The metallic silicide is obtained by silicidizing the metal at a temperature of 400.degree.-700.degree. C. The crystal orientation of the thus formed metallic silicide is at random, and therefore the surface of the bottom electrode made of metallic silicide becomes flatter and smoother. The metal component of the metallic silicide is effectively used in the forming of the filament when a breakdown voltage is applied to the selected electrodes for an electrical connection.

REFERENCES:
patent: 4488262 (1984-12-01), Basire et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5404029 (1995-04-01), Husher et al.

Affiliated with

Also associated with

Rating

Antifuse element, semiconductor device having antifuse elements, does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Antifuse element, semiconductor device having antifuse elements,, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antifuse element, semiconductor device having antifuse elements, will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1248441