Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2007-04-17
2007-04-17
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S225600, C365S243000
Reexamination Certificate
active
11238763
ABSTRACT:
An antifuse cell includes a select transistor, a blocking transistor, and an antifuse. The select transistor allows for selection of the antifuse cell among an array of antifuse cells, while the blocking transistor limits the amount of voltage that may be directly applied to the select transistor. The antifuse may comprise a capacitor. Current used to program an antifuse cell is controlled using a programming current regulator. The programming current regulator may include components that form a current mirror with components of the antifuse cell to tightly control programming current through the antifuse. Dynamic current flowing through a substrate of an antifuse cell is limited using a current limiting resistor directly in series with an antifuse of the antifuse cell. The current limiting resistor minimizes or prevents excessive programming current.
REFERENCES:
patent: 6545928 (2003-04-01), Bell
patent: 6927997 (2005-08-01), Lee et al.
Ben Kaczer, et al. “Consistent Model for Short-Channel nMOSFET After Hard Gate Oxide Breakdown”, IEEE Transactions on Electron Devices. vol. 49, No. 3, Mar. 2002, pp. 507-513.
B.P. Linder, et al. “Gate Oxide Breakdown under Current Limited Constant Voltage Stress”, IEEE, 2000 Symposium on VLS1 Technology Digest of Technical Papers. pp. 214-215.
Cypress Semiconductor Corporation
Elms Richard T.
Luu Pho M.
Okamoto & Benedicto LLP
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