Antifuse capacitor for configuring integrated circuits

Details Antifuse capacitor for configuring integrated circuits Antifuse capacitor for configuring integrated circuits

2007-10-02

2007-10-02

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S202000, C365S243000

Reexamination Certificate

active

11169986

ABSTRACT:
An antifuse cell includes a select transistor, a blocking transistor, and an antifuse. The select transistor allows for selection of the antifuse cell among an array of antifuse cells, while the blocking transistor limits the amount of voltage that may be directly applied to the select transistor. The antifuse including a capacitor. The capacitor may include a gate over a gate oxide and an n-well under the gate oxide. The n-well may have two n+ regions used as contact points for the n-well. Upon programming, an electrically conductive path (e.g., a short) is permanently burned through the gate oxide. The antifuse cell occupies a relatively small area while providing a relatively tight read current distribution.

REFERENCES:
patent: 6545928 (2003-04-01), Bell
patent: 2004/0232446 (2004-11-01), Nishimura et al.
patent: 2005/0007855 (2005-01-01), Lee et al.
Ben Kaczer, et al. “Consistent Model for Short-Channel nMOSFET After Hard Gate Oxide Breakdown”, IEEE Transactions on Electron Devices, vol. 49, No. 3, Mar. 2002, pp. 507-513.

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