Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-30
2007-01-30
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C365S158000
Reexamination Certificate
active
11146431
ABSTRACT:
The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the soft layer that is opposite to a hard layer of the MRAM. One embodiment further includes an additional interlayer of non-antiferromagnetic material between the antiferromagnetic layer and the soft layer.
REFERENCES:
patent: 5477482 (1995-12-01), Prinz
patent: 5541868 (1996-07-01), Prinz
patent: 5627703 (1997-05-01), Smith
patent: 6134138 (2000-10-01), Lu et al.
patent: 6215695 (2001-04-01), Ikeda
patent: 6326637 (2001-12-01), Parkin et al.
patent: 6452764 (2002-09-01), Abraham et al.
patent: 6707084 (2004-03-01), Katti et al.
patent: 6903399 (2005-06-01), Katti et al.
patent: 2001/0030839 (2001-10-01), Zhong et al.
patent: 2002/0018323 (2002-02-01), Li et al.
patent: 2003/0007398 (2003-01-01), Daughton
patent: 2005/0237790 (2005-10-01), Katti et al.
Daughton, James M., “Advanced MRAM Concepts”Article from NVE Corporation, Feb. 7, 2001, pp. 1-6.
“Magnetoelectronics” [online] [retrieved on Jan. 25, 2002] Retrieved from the Internet: <URL: www.ipm.virginia.edu/research/ PVD/Pubs/thesis7/chapter2.PDF> Chapter 2 pp. 7-34.
Everitt, et al., “Pseudo Spin Valve MRAM Cells with Sub-Micrometer Critical Dimension” IEEE Transaction on Magnetics, vol. 34, No. 4, (1998), pp. 1060-1062.
Lee, et al., “Separation of Contributions to Spin Valve Interlayer Exchange Coupling Field by Temperature Dependent Coupling Field Measurements” [online] 46th MMM Conference Seattle, Washington 2001 pp. 1-16 [retrieved on Jan. 25, 2002] Retrieved from the Internet: <URL:www.andrew.cmu.edu/˜zlee/mmm.pdf>.
Shi, et al., “End Domain States and Magnetization Reversal in Submicron Magnetic Structures” IEEE Transactions on Magnetics, vol. 34, No. 4, Jul. 1998, pp. 997-999.
“Non-Volatile Memory (MRAM)” ANXXX [online] Honeywell <retrieved on Nov. 19, 2001> <URL: www.ssec.honeywell.com/avionics/h—gmr.pdf> pp. 1-4.
PCT International Search Report dated Jul. 29, 2003.
Inomata, K. “Present and Future of Magnetic RAM Technology”IEICE Transactions on Electronics, vol. E84-C, No. 6, (Jun. 2001), pp. 740-746.
Drewes Joel A.
Katti Romney R.
Vogt Timothy J.
Huynh Andy
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Nguyen Thinh T
LandOfFree
Antiferromagnetically stabilized pseudo spin valve for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Antiferromagnetically stabilized pseudo spin valve for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antiferromagnetically stabilized pseudo spin valve for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3826309