Antiferromagnetically stabilized pseudo spin valve for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S295000, C257S296000, C257S009000

Reexamination Certificate

active

11103347

ABSTRACT:
The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the soft layer that is opposite to a hard layer of the MRAM. One embodiment further includes an additional interlayer of non-antiferromagnetic material between the antiferromagnetic layer and the soft layer.

REFERENCES:
patent: 5477482 (1995-12-01), Prinz
patent: 5541868 (1996-07-01), Prinz
patent: 5627703 (1997-05-01), Smith
patent: 6134138 (2000-10-01), Lu et al.
patent: 6215695 (2001-04-01), Ikeda
patent: 6326637 (2001-12-01), Parkin et al.
patent: 6452764 (2002-09-01), Abraham
patent: 6650562 (2003-11-01), Holden
patent: 6707084 (2004-03-01), Katti et al.
patent: 6903399 (2005-06-01), Katti et al.
patent: 2001/0030839 (2001-10-01), Zhong et al.
patent: 2002/0018323 (2002-02-01), Li
patent: 2003/0007398 (2003-01-01), Daughton
patent: 2006/0018150 (2006-01-01), Katti et al.
Daughton, James M., “Advanced MRAM Concepts,”Article from NVE Corporation, Feb. 7, 2001, pp. 1-6.
“Magnetoelectronics” [online][retrieved on Jan. 25, 2002] Retrieved from the Internet: <URL: www.ipm.virginia.edu/research/ PVD/Pubs/thesis7/chapter2.PDF> Chapter 2 pp. 7-34.
Everitt, et al., “Pseudo Spin Valve MRAM Cells with Sub-Micrometer Critical Dimension”IEEETransaction on Magnetics, vol. 34, No. 4, (1998), pp. 1060-1062.
Lee, et al., “Separation of Contributions to Spin Valve Interlayer Exchange Coupling Field by Temperature Dependent Coupling Field Measurements” [online]46th MMM Conference Seattle, Washington 2001 pp. 1-16 [retrieved on Jan. 25, 2002]Retrieved from the Internet: <URL:www.andrew.cmu.edu/-zlee/mmm.pdf>.
Shi, et al., “End Domain States and Magnetization Reversal in Submicron Magnetic Structures” IEEE Transactions on Magnetics, vol. 34, No. 4, Jul. 1998, pp. 997-999.
“Non-Volatile Memory (MRAM)” ANXXX [online] Honeywell <retrieved on Nov. 19, 2001> <URL: www.ssec.honeywell.com/avlonics/h—gmr.pdf> pp. 1-4.
PCT International Search Report dated Jul. 29, 2003.
Inomata, K. “Present and Future of Magnetic RAM Technology” IEICE Transactions on Electronics, vol. E84-C, No. 6, (Jun. 2001), pp. 740-746.

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