Anti-reflective material and patterning method

Details Anti-reflective material and patterning method Anti-reflective material and patterning method

1994-12-20

1996-07-30

Chea, Thorl

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

4302701, 430325, 562579, 562542, 562583, 562586, G03C 1825

Patent

active

055410375

ABSTRACT:
The invention provides an anti-reflective material comprising a salt of a carboxyl-terminated fluorinated alkyl polyether compound with a water-soluble amino compound. A resist pattern is defined by forming anti-reflective layer of the anti-reflective material on a photoresist layer, exposing the photoresist layer to a desired pattern of light, removing the anti-reflective layer, and developing the photoresist layer. A fine resist pattern having improved dimensional and alignment accuracies can be defined in a simple, efficient, reproducible manner without substantial environmental pollution. The invention is advantageously utilized in photo-lithography using photoresists.

REFERENCES:
patent: 4085137 (1978-04-01), Mitsch et al.
patent: 4845268 (1989-07-01), Ohsaka et al.

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