Anti-reflective layer used to form a semiconductor device

Details Anti-reflective layer used to form a semiconductor device Anti-reflective layer used to form a semiconductor device

1995-09-28

1997-06-24

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430159, 430166, 430510, 430512, 430950, 428446, G03C 1825, G03F 709

Patent

active

056416075

ABSTRACT:
A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

REFERENCES:
patent: 4407927 (1983-10-01), Kamoshida et al.
patent: 5077185 (1991-12-01), Cho et al.
patent: 5362598 (1994-11-01), Takeyama et al.
patent: 5472827 (1995-12-01), Ogawa et al.
patent: 5472829 (1995-12-01), Ogawa

Affiliated with

Also associated with

Rating

Anti-reflective layer used to form a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anti-reflective layer used to form a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anti-reflective layer used to form a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-148303