Anti-reflective compositions comprising triazine compounds

Details Anti-reflective compositions comprising triazine compounds Anti-reflective compositions comprising triazine compounds

2006-05-02

2006-05-02

Kilday, Lisa (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

C428S523000, C524S236000, C438S644000

Reexamination Certificate

active

07038328

ABSTRACT:
The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or an alkoxymethyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.

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