Anti-reflective coating doped with carbon for use in...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S694000

Reexamination Certificate

active

11216914

ABSTRACT:
The invention pertains to films comprising silicon, oxygen and carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies. One particular disclosed film is an anti-reflective coating, and a method of formation thereof.

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