Anti-reflection oxynitride film for tungsten-silicide substrates

Details Anti-reflection oxynitride film for tungsten-silicide substrates Anti-reflection oxynitride film for tungsten-silicide substrates

1998-02-03

2000-10-17

Potter, Roy

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257639, 257640, H01L 2358

Patent

active

061336130

ABSTRACT:
The present invention provides an anti-reflection film for lithographic application on tungsten-silicide containing substrate. In one embodiment of the present invention, a structure for improving lithography patterning in integrated circuit comprises a tungsten-silicide layer, a diaphanous layer located above the tungsten-silicide layer, an anti-reflection layer located above the diaphanous layer, and a photoresist layer located above the anti-reflection layer for patterning the integrated circuit pattern.

REFERENCES:
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5600165 (1997-02-01), Tsukamoto et al.
patent: 5605601 (1997-02-01), Kawasaki
patent: 5639689 (1997-06-01), Woo
patent: 5924000 (1999-07-01), Linliu

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