Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2007-01-16
2007-01-16
Schilling, Richard L. (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S316000, C430S317000, C528S034000, C528S037000, C528S038000, C528S040000, C528S043000
Reexamination Certificate
active
10797201
ABSTRACT:
There is disclosed an anti-reflection film material used in lithography containing at least a polymer compound having repeating units for copolymerization represented by the following general formula (1), or those containing a polymer compound having repeating units for copolymerization represented by the following general formula (2) and a polymer compound having repeating units for copolymerization represented by the following general formula (3). There can be provided an anti-reflection film material which has an excellent reflection preventive effect to exposure at short wavelength, and has high etch selectivity, namely, an etch rate is higher enough than the photoresist film, an etch rate is sufficiently slower than a substrate to be processed, wherein the shape of the resist pattern formed in the photoresist film on the anti-reflection film can be made perpendicular
REFERENCES:
patent: 3741932 (1973-06-01), Smith
patent: 6069170 (2000-05-01), Bringhen et al.
patent: 6730453 (2004-05-01), Nakashima et al.
patent: A 56-129261 (1981-10-01), None
patent: A 57-83563 (1982-05-01), None
patent: A 57-131250 (1982-08-01), None
patent: A 5-27444 (1993-02-01), None
patent: A 6-118631 (1994-04-01), None
patent: A 6-118656 (1994-04-01), None
patent: A 6-138664 (1994-05-01), None
patent: B2 7-69611 (1995-07-01), None
patent: A 8-87115 (1996-04-01), None
patent: A 8-179509 (1996-07-01), None
patent: A 10-69072 (1998-03-01), None
patent: A 11-60735 (1999-03-01), None
patent: B2 3118887 (2000-10-01), None
patent: A 2000-356854 (2000-12-01), None
patent: A 2001-53068 (2001-02-01), None
patent: A 2001-92122 (2001-04-01), None
patent: A 2001-343752 (2001-12-01), None
patent: B2 3287119 (2002-03-01), None
Won D. Kim et al.; “Investigation of Hardmask/BARC Materials for 157nm Lithography”; in Microlighographic Techniques in Integrated Circuit Fabrication II, Chris A. Mack, Xiaocong Yuan, Editors, Proceedings of SPIE; vol. 4226; 2000; pp. 93-106.
Tom Lynch et al.; “Properties and Performance of Near UV Reflectivity Control Layers”; SPIE; vol. 2195; pp. 225-229.
Qinghuang Lin et al.; “A High Resolution 248 nm Bilayer Resist”; Part of SPIE Conference of Advances in Resist Technology and Processing XVI, Santa Clara, California; Mar. 1999; SPIE; vol. 3678; pp. 241-250.
Peter Trefonas et al.; “Organic Antireflective Coatings for 193nm Lithography”; Part of SPIE Conference of Advances in Resist Technology and Processing XVI, Santa Clara, California; Mar. 1999; SPIE; vol. 3678; pp. 702-712.
Hatakeyama Jun
Iwabuchi Motoaki
Ogihara Tsutomu
Ueda Takafumi
Schilling Richard L.
Shin-Etsu Chemical Co. , Ltd.
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