Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-10-03
1999-02-16
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438792, H01L 21318
Patent
active
058720545
ABSTRACT:
Values of a real part n and an imaginary part k of the relation indicating a complex refractive index as an optical characteristic of an anti-reflection film are selected to be in the ranges of 1.0<n<3.0 and 0.4<k<1.3, respectively. The values of the real part and n and the imaginary part k of the complex refractive index are set in the above-described range by changing parameters of composition of a material of a plasma nitride film formed by a plasma CVD method. By this method, it is possible to easily select the anti-reflection film having an optimum optical characteristic without depending on experiments.
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Bowers Jr. Charles L.
Mitsubishi Denki & Kabushiki Kaisha
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