Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-05-05
2010-06-15
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C355S053000
Reexamination Certificate
active
07736820
ABSTRACT:
An EUV mask includes, on top of a multi-layer mirror, a spectral purity enhancement layer, for application in an EUV lithographic apparatus. On top of the spectral purity enhancement layer, a patterned absorber layer is provided. The spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. The patterned absorber layer may also itself function as an anti-reflection (AR) coating. The AR effect of this absorber layer is a function of the aperture sizes in the pattern. The spectral purity of a mask may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.
REFERENCES:
patent: 6359969 (2002-03-01), Shmaenok
patent: 6556648 (2003-04-01), Bal et al.
patent: 6576912 (2003-06-01), Visser et al.
patent: 6614505 (2003-09-01), Koster et al.
patent: 7336416 (2008-02-01), Van Herpen et al.
patent: 7463413 (2008-12-01), Van Herpen et al.
patent: 2003/0198874 (2003-10-01), Lee
patent: 2004/0002009 (2004-01-01), Yan
patent: 2004/0051954 (2004-03-01), Bristol et al.
patent: 2004/0094724 (2004-05-01), Schuurmans et al.
patent: 1 065 568 (2001-01-01), None
patent: 1 065 568 (2003-03-01), None
patent: WO 2004/053540 (2004-06-01), None
patent: 2004/104707 (2004-12-01), None
International Search Report issued for PCT Appln. No. PCT/NL2007/050141, dated Aug. 8, 2007.
Banine Vadim Yevgenyevich
Klunder Derk Jan Wilfred
Van Herpen Maarten Marinus Johannes Wilhelmus
Van Ingen Schenau Koen
ASML Netherlands B.V.
Fraser Stewart A
Huff Mark F
Sterne, Kessler, Goldstein & Fox P.L.L.C
LandOfFree
Anti-reflection coating for an EUV mask does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Anti-reflection coating for an EUV mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anti-reflection coating for an EUV mask will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4212028