Anti-punch-through semiconductor device

Details Anti-punch-through semiconductor device Anti-punch-through semiconductor device

2005-12-07

2008-10-28

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S330000

Reexamination Certificate

active

07442980

ABSTRACT:
An anti-punch-through semiconductor device is provided. The anti-punch-through semiconductor device includes a substrate, at least an isolation region and a plurality of trench devices. The trench device is disposed in the substrate. The trench device includes a source/drain region. The source/drain region of the trench device is disposed at the bottom of the trench device. The isolation region is disposed in the substrate and between the source/drain regions of each trench device.

REFERENCES:
patent: 4890144 (1989-12-01), Teng et al.
patent: 5763310 (1998-06-01), Gardner

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