Anti-parallel diode structure and method of fabrication

Details Anti-parallel diode structure and method of fabrication Anti-parallel diode structure and method of fabrication

2011-03-22

2011-03-22

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S148000, C365S158000, C257S204000, C257SE29327

Reexamination Certificate

active

07911833

ABSTRACT:
An anti-parallel diode structure and method of fabrication is presently disclosed. In some embodiments, an anti-parallel diode structure has a semiconductor region comprising a first insulator layer disposed between a first semiconductor layer and a second semiconductor layer. The semiconductor region can be bound on a first side by a first metal material and bound on a second side by a second metal material so that current below a predetermined value is prevented from passing through the semiconductor region and current above the predetermined value passes through the semiconductor region.

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