Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1995-03-24
1998-05-26
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438655, 438659, 438931, H01L 2128
Patent
active
057563918
ABSTRACT:
The present invention is directed to a method for inhibiting silicon oxidation on a silicon surface by forming a very thin carbon-containing silicon surface layer on the silicon. The silicon surface is exposed to a carbon-containing plasma to form the carbon-containing silicon layer. The carbon treatment also renders he silicon surface slightly amorphous due to ion bombardments from plasma. An oxide free and slightly amorphous silicon surface promotes homogeneous progress of silicidation reaction between the silicon and a metal deposited thereon, which enables thin but smooth and stable silicide film formation. The present invention is also directed to a method for forming uniform silicon layers only on horizontal portions of features on a substrate. A silicon layer is deposited on to conform to all exposed surfaces of a device. The horizontal surfaces are then exposed to a carbon-containing plasma to form anti-oxidation layers on the horizontal surfaces. Successive oxidation can then proceed selectively on the vertical portions of the silicon. Each horizontal silicon layer at different level remains intact and is electrically isolated each other.
REFERENCES:
patent: 3616380 (1971-10-01), Lepselter et al.
patent: 4581627 (1986-04-01), Ueda et al.
patent: 4705659 (1987-11-01), Bernstein et al.
patent: 4729969 (1988-03-01), Suda et al.
patent: 4939100 (1990-07-01), Jeuch et al.
patent: 5024723 (1991-06-01), Goesele et al.
patent: 5395774 (1995-03-01), Bajor et al.
patent: 5420056 (1995-05-01), Moslehi
patent: 5431964 (1995-07-01), Rivoire
S. Wolf, "Silicon Processing for the VLSI Era, vol. 1", Lattice Press, pp. 547-555, 1986.
Kimura et al, "Effect of Mixing Ions on the Formation Process of B-SiC Fabricated by Ion Beam Mixing", Thin Solid Films, vol. 157, pp. 117-127, 1988.
Bilodeau Thomas G.
Kabushiki Kaisha Toshiba
Niebling John
LandOfFree
Anti-oxidation layer formation by carbon incorporation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Anti-oxidation layer formation by carbon incorporation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anti-oxidation layer formation by carbon incorporation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1959438