Anti-fuse memory circuit

Details Anti-fuse memory circuit Anti-fuse memory circuit

2008-03-25

2008-03-25

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S189011

Reexamination Certificate

active

11516683

ABSTRACT:
First and second anti-fuse elements are provided for storing 1-bit data. A program voltage generating circuit generates a programming voltage and applies it to the first and second anti-fuse elements. A read voltage generating circuit generates a readout voltage and applies it to the first and second anti-fuse elements. First and second transistors are inserted between the first and second anti-fuse elements and a ground potential node, and are respectively turned on by first and second select signals during the programming period. A switch element is connected between the first and the second transistors. The switch element is turned off during the programming period, and turned on during the readout period. A sense amplifier is connected to the switch element in order to sense the data read out from the first and the second anti-fuse elements.

REFERENCES:
patent: 5838625 (1998-11-01), Cutter et al.
patent: 6630724 (2003-10-01), Marr
patent: 6671040 (2003-12-01), Tong et al.
patent: 7102951 (2006-09-01), Paillet et al.
patent: 7149114 (2006-12-01), Taheri et al.
patent: 2004-022736 (2004-01-01), None

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