Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-05-03
2011-05-03
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S128000, C438S131000, C438S132000, C438S600000, C438S601000, C438S618000, C205S125000, C205S118000, C205S119000, C205S120000, C205S123000, C257S050000, C257S530000, C257SE23143, C257SE23142, C257SE23145, C257SE23146, C257SE23147, C257SE23151, C257SE23168, C257SE21117
Reexamination Certificate
active
07935621
ABSTRACT:
Disclosed are embodiments of a circuit and method for electroplating a feature (e.g., a BEOL anti-fuse device) onto a wafer. The embodiments eliminate the use of a seed layer and, thereby, minimize subsequent processing steps (e.g., etching or chemical mechanical polishing (CMP)). Specifically, the embodiments allow for selective electroplating metal or alloy materials onto an exposed portion of a metal layer in a trench on the front side of a substrate. This is accomplished by providing a unique wafer structure that allows a current path to be established from a power supply through a back side contact and in-substrate electrical connector to the metal layer. During electrodeposition, current flow through the current path can be selectively controlled. Additionally, if the electroplated feature is an anti-fuse device, current flow through this current path can also be selectively controlled in order to program the anti-fuse device.
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Basker Veeraraghavan S.
Furukawa Toshiharu
Tonti William R.
Abdelaziez Yasser A
Canale Anthony J.
Garber Charles D
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
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