Anti-corrosion treatment for patterning of metallic layers

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156652, 156656, 1566571, 156664, 156665, 430313, 430316, 430318, B44C 122

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active

046683356

ABSTRACT:
An improved method is provided for defining interconnect patterns in an integrated circuit fabricated on a semiconductor wafer. The improvement comprises the step of immersing the wafer in a weak base solution, prior to etching a titanium-tungsten barrier layer, so as to remove from the wafer chlorides and flourides remaining as a result of a previous step of etching a conductor layer. In a preferred embodiment of the invention, a step of immersing the wafer in a strong acid solution is also performed to remove chlorides from the wafer.

REFERENCES:
patent: 4267012 (1981-05-01), Pierce et al.
patent: 4325984 (1982-04-01), Galfo et al.
patent: 4547260 (1985-10-01), Takada et al.
Thompson et al, Introduction to Microlithography, American Chemical Society, Washington, D.C., 1983, pp. 243-244.
Harrison et al., The Use of Anti-Reflection Coatings for Photoresist Linewidth Control, National Semiconductor Co., 1983, pp. 1-18.

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