Anodically bonded device structure

Stock material or miscellaneous articles – Composite – Of quartz or glass

Reexamination Certificate

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C428S426000, C428S428000, C428S446000, C428S448000, C429S149000, C429S218100

Reexamination Certificate

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06972154

ABSTRACT:
We have developed a method of anodic bonding which directs cations to a location within a bonding structure which is away from critical bonding surfaces. This prevents the formation of compounds comprising the cations at the critical bonding surfaces. The anodic bonding electrode contacts are made in a manner which concentrates the cations and compounds thereof in a portion of the bonded structure which can be removed, or cleaned to remove the compounds from the structure. A device formed from the bonded structure contains minimal, if any, of the cation-comprising compounds which weaken bond strength within the structure. In the alternative, the cations and compounds thereof are directed to a portion of the bonding structure which does not affect the function of a device which includes the bonded structure.

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* Shuichi Shoji et al., “Anodic Bonding Below 180° C For Packaging And Assembling Of MEMS Using Alminosilicate-β-Glass-Ceramic.” IEEE, 0-7803-3744 (Jan. 1997). pp. 482-487.

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