Stock material or miscellaneous articles – Web or sheet containing structurally defined element or... – Physical dimension specified
Patent
1984-02-16
1986-12-30
Buffalow, Edith
Stock material or miscellaneous articles
Web or sheet containing structurally defined element or...
Physical dimension specified
B32B 900
Patent
active
046328718
ABSTRACT:
A structure for use in an X-ray membrane (pellicle) mask is provided in which anodic bonding of layers is employed. Anodic bonding as used here provides a permanent bond between the layers, has zero thickness and provides substantial improvements in the obtained flatness of the mask by eliminating conventional glue for attachment. By applying a voltage between a layer, such as silicon, and a glass plate, and simultaneously heating both elements a permanent bond is established which is extremely flat thus providing minimum misalignment of the mask during subsequent X-ray lithography fabrication.
REFERENCES:
patent: 3397278 (1968-08-01), Pomerantz
patent: 3417459 (1968-12-01), Pomerantz et al.
patent: 4139443 (1979-02-01), Sakurai
patent: 4171489 (1979-10-01), Adams et al.
patent: 4253029 (1981-02-01), Lepselter et al.
patent: 4293624 (1981-10-01), Buckley
patent: 4411972 (1983-10-01), Narken et al.
patent: 4451544 (1984-05-01), Kawabucki
T. R. Anthony, "Anodic Bonding of Imperfect Surfaces," Journal of Applied Physics, vol. 54, No. 5, May 1983, pp. 2419-2428.
Karnezos Marcos
Nakanos Howard H.
Neukermans Armand P.
Buffalow Edith
Cole Stanley Z.
Varian Associates Inc.
Warsh Kenneth L.
LandOfFree
Anodic bonding method and apparatus for X-ray masks does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Anodic bonding method and apparatus for X-ray masks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anodic bonding method and apparatus for X-ray masks will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1547016