Anode plate for flat panel display having silicon getter

Electric lamp and discharge devices: systems – Cathode ray tube circuits – Cathode-ray deflections circuits

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

313466, 313559, 445 24, 445 55, H01J 172, H01J 938

Patent

active

056147856

ABSTRACT:
An anode plate (10) for use in a field emission flat panel display device (8) includes a transparent substrate (26) having a plurality of spaced-apart, electrically conductive regions (28) are covered by a luminescent material (24) and from the anode electrode. A getter material (29) of porous silicon is deposited on the substrate (26) between the conductive regions (28) of the anode plate (10). The getter material (29) of porous silicon is preferably electrically nonconductive, opaque, and highly porous. Included are methods of fabricating the getter material (29) on the anode plate (10).

REFERENCES:
patent: 4608518 (1986-08-01), Fukuda et al.
patent: 5063323 (1991-11-01), Longo et al.
patent: 5223766 (1993-06-01), Nakayama et al.
patent: 5453659 (1995-09-01), Wallace et al.
patent: 5491376 (1996-02-01), Levine et al.
patent: 5502348 (1996-03-01), Moyer et al.
patent: 5520563 (1996-05-01), Wallace et al.
patent: 5525857 (1996-06-01), Gnade et al.
patent: 5528102 (1996-06-01), Gnade et al.
P. Gupta et al, "Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces," Physical Review B, 15 May 1988, vol. 37, No. 14, pp. 8234-8243.
P.S. Taylor et al., "The Dissociative Adsorption of Ammonia on Si(100)," Surface Science 215, (1989)--North-Holland, Amsterdam, pp. L286-292.
M.J. Dresser et al., "The Adsorption and Decomposition of NH3, on Si(100)--Detection of the NH2(a) Species," Surface Science 218, (1989),--North-Holland, Amsterdam, pp. 75-107.
R.M. Wallace et al., "Ni impurity effects on hydrogen surface chemistry and etching of Si(111)," Applied Surface Science 45, (1990)--North-Holland, pp. 201-206.
P.A. Taylor et al., "The Adsorption and thermal decomposition of PH3 on Si(111)-(7.times.7)," Surface Science 238, (1990)--North-Holland, pp. 1-12.
R.M. Wallace et al., "An ESDIAD study of chemisorbed hydrogen on clean and H-exposed Si(111)-(7.times.7)," Surface Science 239, (1990)--North-Holland, pp. 1-12.
N. Hirashita et al., "Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si(100) surfaces," Appl. Phys. Lett. 56(5), 29 Jan. 1990, pp. 451-453.
G. S. Higashi et al., "Ideal hydrogen termination of the Si(111) surface," Appl. Phys. Lett. 56(7), 12 Feb. 1990, pp. 656-658.
C.C. Cheng et al., "Direct determination of absolute monolayer converages of chemisorbed C.sub.3 H.sub.3 and C.sub.2 H.sub.4 on Si(100)," J. Appl. Phys. 67(8), 15 Apr. 1990, pp. 3693-3699.
T. Shibata et al., "Low-Temperature Si Surface Cleaning by Hydrogen Beam with Electron-Cyclotron-Resonance Plasma Excitation," MRS 1989 Fall Meeting Symp. D 2.10. Boston, MA 1989, vol. 160., pp. 1181-1183.
S. S. Iyer et al., "Low-temperature silicon cleaning via hydrogen passivation and conditions for epitaxy," Appl. Phys. Lett., vol. 57, No. 9, 27 Aug. 1990, pp. 893-895.
L.T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett. 57(10), 3 Sep. 1990, pp. 1046-1048.
T. Takahagi et al., "Control of the chemical reactivity of a silicon single-crystal surface using the chemical modification technique," J. Appl. Phys., vol. 68, No. 5, 1 Sep. 1990, pp. 2188-212191.
R.M. Wallace et al., "PH.sub.3 surface chemistry on Si(111)-(7.times.7): A study by Auger spectroscopy and electron stimulated desorption methods," J. Appl. Phys. 68(7), 1 Oct. 1990, pp. 3669-3678.
R. S. Becker et al., "Atomic Scale Conversion of Clean Si(111): H-1 .times. 1 to Si(111)-2.times.1 by Electron-Stimulated Desorption," Physical Review Letters, vol. 65, No. 15, 8 Oct. 1990, pp. 1917-1920.
P. Gupta et al., "FTIR studies of H.sub.2 O and D.sub.2 O decompsition on porous silicon surfaces," Surface Science 245, (1991), North-Holland, pp. 360-372.
T. Yasaka et al, "Chemical Stability of HF-Treated Si(111) Surfaces," Surface Science 268, (1992) North-Holland, pp. 205-216.
R.T. Collins et al., "Photoinduced hydrogen loss from porous silicon," Appl. Phys. Lett., vol. 61, No. 14, 5 Oct. 1992, pp. 1649-1651.
J. H. Craig, Jr. et al., "Electron desorption study of HF etched Si(100)," J. Vac. Sci. Technol. A 11(3), May/June 1993, pp. 554-556.
M.B. Robinson et al., "Porous silicon photoluminescence versus HF etching: No correlation with surface hydrogen species," Appl. Phys. Lett., vol. 62., No. 13, 29 Mar. 1993, pp. 1493-1495.
R. Kumar et al., "Effect of surface treatment on visible luminescence of porous silicon: Correlation with hydrogen and oxygen terminators," Appl. Phys. Lett. 63 (22), vol. 63, No. 22, 29 Nov. 1993, pp. 3032-3034.
P.A. Taylor et al., "Adsorption & Decomposition of Acetylene on Si(100)-(2.times.1) American Chemical Society", vol. 114, (1992) pp. 6754-6760.
L. Clemen et al., "Adsorptoon & Thermal Behavior on Si(100)-(2.times.1) Surface Science" 268 (1992) pp. 205-216.
Y. Morita et al., "Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments", Jpn Journal of Applied Physics (vol. 30) No. 12B Dec. 1991, pp. 3570-3574.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Anode plate for flat panel display having silicon getter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anode plate for flat panel display having silicon getter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anode plate for flat panel display having silicon getter will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2205971

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.