Annular segmented MOSFET

Details Annular segmented MOSFET Annular segmented MOSFET

2006-02-28

2006-02-28

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S401000, C257S412000

Reexamination Certificate

active

07005713

ABSTRACT:
An annular segment MOSFET structure has reduced drain electric fields for a given applied voltage and dimensional sizing for improved reliability from damage by reducing high energy hot carriers laterally traversing the channel by reducing the intensity of electric fields in the MOSFET structure by creating diverging electric field lines with decreased electric field strength at the drain, while enabling compact integrated layouts of multiple MOSFETs within a square area of surface silicon.

REFERENCES:
patent: 3803461 (1974-04-01), Beneking

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