Annular gate and technique for fabricating an annular gate

Details Annular gate and technique for fabricating an annular gate Annular gate and technique for fabricating an annular gate

2007-10-02

2007-10-02

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27057, C257SE27096, C257SE29131, C257SE29183, C257SE29189, C257SE29262, C257SE29313, C257SE29318, C257SE21375, C257SE21383, C257SE21410, C257SE21612, C257SE21676, C257SE21652

Reexamination Certificate

active

11010951

ABSTRACT:
A memory structure having a vertically oriented access transistor with an annular gate region and a method for fabricating the structure. More specifically, a transistor is fabricated such that the channel of the transistor extends outward with respect to the surface of the substrate. An annular gate is fabricated around the vertical channel such that it partially or completely surrounds the channel. A buried annular bitline may also be implemented. After the vertically oriented transistor is fabricated with the annular gate, a storage device may be fabricated over the transistor to provide a memory cell.

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