Annealing of titanium - titanium nitride in contact hole

Details Annealing of titanium - titanium nitride in contact hole Annealing of titanium - titanium nitride in contact hole

1995-10-27

1997-01-07

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437247, H01L 2130

Patent

active

055916724

ABSTRACT:
A process has been developed in which small diameter contact holes can be filled with chemically vapor deposited tungsten, without severe attack of the contact hole liner materials. An adhesive layer of titanium, and a barrier layer of titanium nitride are used for the contact hole liner, and are deposited prior to tungsten process. A process consisting of subjecting the barrier layer of titanium nitride to a rapid thermal anneal, in an ammonia ambient, results in enhanced barrier characteristics. The robust titanium nitride layer is now able to survive the tungsten deposition process, and attack form fluorine ions, produced during the decomposition of the tungsten source, tungsten hexafluoride.

REFERENCES:
patent: 4994410 (1991-02-01), Sun et al.
patent: 5232871 (1993-08-01), Ho
patent: 5275715 (1994-01-01), Tuttle
patent: 5286675 (1994-02-01), Chen et al.
patent: 5434044 (1995-07-01), Nulman et al.
patent: 5525543 (1995-06-01), Chen

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