Annealing methods of doping electrode surfaces using dopant gase

Details Annealing methods of doping electrode surfaces using dopant gase Annealing methods of doping electrode surfaces using dopant gase

1997-11-21

1999-08-24

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

257309, H01L 218242

Patent

active

059435844

ABSTRACT:
A method of doping a surface portion of a layer of an integrated circuit device includes the steps of forming a layer of a semiconductor material on an integrated circuit substrate and annealing the layer of the semiconductor material at a predetermined temperature while flowing a dopant gas over the layer of the semiconductor material. More particularly, the step of forming the layer of the semiconductor material can include forming a first sub-layer of the semiconductor material on the integrated circuit substrate and forming a second sublayer of the semiconductor material on the first sublayer where the second sublayer has an increased surface area. For example, the second sublayer can be a hemispherical grained silicon layer.

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