Anisotropically etched ink fill slots in silicon

Details Anisotropically etched ink fill slots in silicon Anisotropically etched ink fill slots in silicon

1993-01-25

1994-05-03

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156647, 156657, 1566591, 156662, H01L 21306, B44C 122, C03C 1500

Patent

active

053084420

ABSTRACT:
An ink fill slot 18 can be precisely manufactured in a substrate 12 utilizing photolithographic techniques with chemical etching. N-type <100> silicon wafers are double-side coated with a dielectric layer 26 comprising a silicon dioxide layer and/or a silicon nitride layer. A photoresist step, mask alignment, and plasma etch treatment precede an anisotropic etch process, which employs an anisotropic etchant for silicon such as KOH or ethylene diamine para-catechol. The anisotropic etch is done from the backside 12b of the wafer to the frontside 12a, and terminates on the dielectric layer on the frontside. The dielectric layer on the frontside creates a flat surface for further photoresist processing of thin film resistors 16.

REFERENCES:
patent: Re32572 (1988-01-01), Hawkins et al.
patent: 4601777 (1986-07-01), Hawkins et al.
patent: 4612554 (1986-09-01), Poleshuk
patent: 4638337 (1987-01-01), Torpey et al.
patent: 4789425 (1988-12-01), Drake et al.
patent: 4829324 (1989-05-01), Drake et al.
patent: 4851371 (1989-07-01), Fisher et al.
patent: 4863560 (1989-09-01), Hawkins
patent: 4875968 (1989-10-01), O'Neill et al.
patent: 4882595 (1989-11-01), Trueba et al.
patent: 4899178 (1990-02-01), Tellier
patent: 4899181 (1990-02-01), Hawkins et al.
patent: 5131978 (1992-07-01), O'Neill
patent: 5141596 (1992-08-01), Hawkins et al.
K. E. Bean, "Anisotropic Etching of Silicon", IEEE Transactions on Electron Devices, vol. ED-25, No. 10, pp. 1185-1192 (Oct. 1978).
K. L. Petersen, "Silicon as a Mechanical Material", in Proceedings of the IEEE, vol. 70, No. 5, pp. 420-457 (May 1982).
E. Bassous, "Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon", IEEE Transactions on Electron Devices, vol. ED-25, No. 10, pp. 1178-1185 (Oct. 1978).

Affiliated with

Also associated with

Rating

Anisotropically etched ink fill slots in silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anisotropically etched ink fill slots in silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropically etched ink fill slots in silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2112291