Anisotropic wet etching of chalcogenide glass resists

Details Anisotropic wet etching of chalcogenide glass resists Anisotropic wet etching of chalcogenide glass resists

1982-04-08

1984-06-12

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430313, 430317, 430323, 430296, 156643, 1566591, 156904, G03C 500

Patent

active

044542216

ABSTRACT:
A method for enhancing linewidth control during the patterning of a substrate with a resist is disclosed. Resists used in the invention have chemically separated structures characterized by two types of regions of different chemical composition, which different types of regions are interspersed among each other. Because the resists used in the present invention have chemically separated structures, anisotropic wet development of these resists is achievable with an appropriate bicomponent wet developer. Consequently, after exposure, the image formed in a thin, upper layer of the resist is transferred with vertical walls through the thickness of the resist.

REFERENCES:
patent: 4127414 (1978-11-01), Yoshikawa et al.
patent: 4276368 (1981-06-01), Heller et al.
patent: 4320191 (1982-03-01), Yoshikawa et al.
patent: 4405710 (1983-09-01), Balasubramanyam
Tai et al., "Submicron Optical Lithography Using an Inorganic Resist/Polymer Bilevel Scheme," J. Vac. Sci. Technol., 17(5), Sep./Oct. 1980, pp. 1169-1175.

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