Anisotropic single crystal silicon etching solution and method

Details Anisotropic single crystal silicon etching solution and method Anisotropic single crystal silicon etching solution and method

1991-01-17

1993-05-04

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156649, 156662, 252 795, 252 791, 2041291, 20412995, H01L 2100

Patent

active

052078663

ABSTRACT:
A method of anisotropically etching single crystal silicon includes providing single crystal silicon to be etched and placing it in an etching solution consisting essentially of R.sub.4 NOH and solvent wherein R is an alkyl group having between 0 and 4 carbon atoms. The solution will preferentially etch <100> or <110> oriented single crystal silicon. Additionally, electrochemical etching may be employed to preferentially etch P type single crystal silicon.

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