Anisotropic silicon nitride etching for shallow trench isolation

Details Anisotropic silicon nitride etching for shallow trench isolation Anisotropic silicon nitride etching for shallow trench isolation

1997-08-08

2000-10-17

Gulakowski, Randy

Etching a substrate: processes

Forming or treating electrical conductor article

Forming or treating resistive material

216 17, 216 39, 216 67, 216 79, 438724, H01L 21318

Patent

active

061326313

ABSTRACT:
An etchant mixture of carbon tetrafluoride and argon in a plasma etch chamber produces straight walled isolation trenches in a silicon nitride layer, the trenches having rounded bottoms and no microtrenching.

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S. Wolf, Silicon Processing for the VLSI Era vol. 2--Process Integration, Lattice Press, Sunset Beach CA, pp. 35, 52-55, 1990.

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