Anisotropic silicon etching in fluorinated plasma

Details Anisotropic silicon etching in fluorinated plasma Anisotropic silicon etching in fluorinated plasma

1986-11-17

1988-05-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 20419237, 252 791, 427 38, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

047417994

ABSTRACT:
A method of high rate anisotropic etching of silicon in a high pressure plasma is described. In one embodiment the etching ambient is a mixture of either NF.sub.3 or SF.sub.6, an inert gas such as nitrogen, and a polymerizing gas such as CHF.sub.3 that creates conditions necessary for anisotropy not normally possible with nonpolymerizing fluorinated gases in a high pressure regime. The etch process is characterized by high etch rates and good uniformity utilizing photoresist or similar materials as a mask. The present process may advantageously be used to etch deep trenches in silicon using a photoresist mask.

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patent: 4528066 (1985-07-01), Merkling, Jr. et al.
patent: 4529475 (1985-07-01), Okano et al.
patent: 4534816 (1985-08-01), Chen et al.
Mogab et al., "Anisotropic plasma etching of polysilicon", J. Vac. Sci. Technol., vol. 17, No. 3, May/Jun. 1980, pp. 721-730.
Mathad, G. S., "Review of Single Wafer Reactor Technology. . . ", Solid State Technology, Apr. 1985, pp. 221-225.
Bruce et al., "High Rate Anisotropic Aluminum Etching", J. Electrochem. Soc., vol. 130, No. 6, pp. 1369-1372 (1983).

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