Anisotropic plasma etching of tungsten

Details Anisotropic plasma etching of tungsten Anisotropic plasma etching of tungsten

1986-09-22

1987-12-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156656, 1566591, 156626, 20419235, 252 791, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

047131411

ABSTRACT:
An anisotropic plasma etching of a tungsten metal film of a semiconductor device is disclosed. The device is placed in a plasma etcher using SF.sub.6 and Cl.sub.2 gas mixture to anisotropically etch the tungsten metal film layer.

REFERENCES:
patent: 4465553 (1984-08-01), Hijikata et al.
patent: 4473435 (1984-09-01), Zafiropoulo et al.
patent: 4473436 (1984-09-01), Beinvogl
patent: 4579623 (1986-04-01), Suzuki et al.
Tang et al., "Tungsten Etching INCF.sub.4 and SF.sub.6 Discharges," Journal of the Electro-Chemical Society, Jan. 1984, pp. 115-120, vol. 131, No. 1.
Mehta et al., "Blanket CVD Tungsten Interconnect for VLSI Devices," V-MIC Conf. Jun. 9-10, 1986, pp. 418-435.
Picard et al., "Plasma Etching of Refractory Metals (W, MO, TA) and Silicon in SF.sub.6 and SF.sub.6 -O.sub.2. An Analysis of the Reaction Products," Plasma Chemistry and Plasma Processing, vol. 5, No. 4, 1985, pp. 333-351.
Degenkolb et al., "Selective Dry Etching of Tungsten for VLSI Metalization," Journal of the Electro-Chemical Society, Abstract No. 244, 167th Society Meeting vol. 85-1, 1985, p. 353.

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