Anisotropic plasma etching of semiconductors

Details Anisotropic plasma etching of semiconductors Anisotropic plasma etching of semiconductors

1983-03-21

1984-03-13

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156626, 156646, 156657, 1566591, 156345, 204192E, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044365845

ABSTRACT:
A method for dry anisotropic etching of semiconductor material by a reactive gas infused in the presence of a low-pressure plasma discharge uses a photoresist mask superposed on a semiconductive film with the slope of the photoresist edges defined within a critical angular range to allow selective formation of a protective polymer film which prevents lateral etching of the edges of the photoresist and sidewalls of the film, while not inhibiting vertical etching, thereby allowing precision definition of the etched pattern. A novel technique to determine the conditions of the photoresist sidewall geometry necessary for polymer film formation and predictable etching behavior encapsulates the film in a thick layer of photoresist, which after cleaving the structure permits selectively etching the photoresist to expose and retain the polymer film without deformation.

REFERENCES:
patent: 4333793 (1982-06-01), Lifshitz et al.
patent: 4341593 (1982-07-01), Kurisaki et al.
patent: 4372807 (1983-02-01), Vossen et al.

Affiliated with

Also associated with

Rating

Anisotropic plasma etching of semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anisotropic plasma etching of semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropic plasma etching of semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-490936