Anisotropic plasma etching

Details Anisotropic plasma etching Anisotropic plasma etching

1979-03-28

1981-03-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 1566591, 204192E, 204298, 250531, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

042539072

ABSTRACT:
Method of anisotropically etching a semiconductor substrate (32). The substrate (32) is placed in an evacuated reaction chamber (50) and exposed to a gas plasma (63) which has been excited with an AC source having a frequency greater than 0 Hz but less than 300 KHz. The pressure in the chamber, and chamber geometry, are such that the volume power density of the plasma is less than 0.01 W/cm.sup.3.

REFERENCES:
patent: 3867216 (1975-02-01), Jacob
patent: 3971684 (1976-07-01), Muto et al.
patent: 3975252 (1976-08-01), Haser et al.
patent: 3984301 (1976-10-01), Matsuzaki et al.
patent: 4028155 (1977-06-01), Jacob
patent: 4057460 (1977-11-01), Saxena et al.
patent: 4064030 (1977-12-01), Makai et al.
patent: 4070264 (1978-01-01), Loiseau et al.
patent: 4073669 (1978-02-01), Heinecke et al.
patent: 4134817 (1979-01-01), Bourdon
patent: 4208241 (1980-01-01), Harshbarger
IBM Technical Disclosure Bulletin, vol. 20, No. 5, Oct. 1977, Isotropic and Anisotropic Etching in Adiode System by Gartner et al., pp. 1744-1745.

Affiliated with

Also associated with

Rating

Anisotropic plasma etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anisotropic plasma etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropic plasma etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-78254