Anisotropic liquid phase photochemical copper etch

Details Anisotropic liquid phase photochemical copper etch Anisotropic liquid phase photochemical copper etch

1992-09-30

1994-01-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156656, 1566591, 156666, 156901, C23F 100, B44C 122

Patent

active

052797023

ABSTRACT:
A copper substrate 30 is immersed in a liquid 34 (e.g. 0.1 molar concentration hydrochloric acid) and illuminated with collimated radiation 24 (e.g. collimated visible/ultraviolet radiation) produced by a radiation source 20 (e.g. a 200 Watt mercury xenon arc lamp). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the copper substrate 30. An etch mask 32 may be positioned between the radiation source 20 and the substrate 30 (preferably the mask is also in the liquid). The copper substrate 30 and liquid 34 may be maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the copper is not appreciably etched by the liquid. Upon illumination the etch rate is substantially increased. A further aspect is the addition of a passivant (e.g. iodine) to the liquid which forms a substantially insoluble passivation layer 36 on the substrate which is removed or partially removed by the radiation 24. Sidewalls 40 are protected from the etchant by vertical passivation layers 42, further increasing the difference between the illuminated and unilluminated etch rates.

REFERENCES:
patent: 4391683 (1983-07-01), Buckley et al.
patent: 4414066 (1983-11-01), Forrest et al.
patent: 4415414 (1983-11-01), Burton et al.
patent: 4904340 (1990-02-01), Miracky et al.
patent: 5100499 (1992-03-01), Douglas
patent: 5157000 (1992-10-01), Elkind et al.
patent: 5165283 (1992-11-01), Kurtz et al.
patent: 5201989 (1993-04-01), Douglas et al.
Toyama, et al., "Crack-Free PZT Thin Films Micropatterned on Silicon Substrate for Integrated Circuits", (abstract) Seiko Instruments Inc.
Watton, et al., "Materials and Technology Research in Uncooled Ferroelectric IR Detector Arrays", Royal Signals and Radar Establishment, U.K., pp. 69-77.
Kauffman, et al., "Studies of Reactions of Atomic and Diatomic Cr, Mn, Fe, Co, Ni, Cu, and Zn with Molecular Water at 15K", Journal of Physical Chemistry, vol. 89, No. 16, pp. 3541-3547, 1985.
Park, et al., "Reactions and Photochemistry of Atmoic and Diatomic Nickel with Water at 15 k", High Temperature Science, pp. 1-15, vol. 25, 1988.
Hauge, et al., "Matrix Isolation Studies of the Reactions of Metal Atoms with Water", High Temperature Science Inc.,pp.338-339, 1981.
Kauffman, et al., "Infrared Matric Isolation Studies of the Interactions of Mg, Ca, Sr, and Ba Atoms and Small Clusters with Water", High Temperature Science,pp. 97-118, vol. 18, 1984.
Douglas, et al., "Matrix Isolation Studies by Electronic Spectroscopy of Group IIIA Metal-Water Photochemistry", J. Chem. Soc., Faraday Trans. 1, pp.1533-1553, 79, 1983.
Douglas, et al., "Electronic Matrix Isolation Spectroscopic Studies of the Group IIA Metal-Water Phototochemistry", High Temperature Science, pp. 201-235, vol. 17, 1984.

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