Anisotropic etching of aluminum

Details Anisotropic etching of aluminum Anisotropic etching of aluminum

1984-09-28

1985-10-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 156665, 204192E, 252 791, C23F 100, B44C 122, C03C 1500, C03C 2506

Patent

active

045472610

ABSTRACT:
An improved etchant gas composition for the plasma etching of a layer of aluminum or its alloys on a substrate is provided. The etchant composition comprises boron trichloride, nitrogen and a halogenated fluorocarbon. In addition to providing an efficient, anisotropic etch, the subject etchant compositions form a passivating coating on aluminum reactor walls, protecting them from being etched and substantially reducing contamination problems. The subject compositions etch aluminum/silicon alloys without leaving a residue of slilicon "freckles" on the substrate surface.

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patent: 4372807 (1983-02-01), Vossen, Jr. et al.
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Kammerdiner, Solid State Technology, pp. 79-85, Oct. 1981.
Reichelderfer, Solid State Technology, pp. 160-165, Apr. 1982.
Sato et al., J. Electrochem. Soc., vol. 129, No. 11, pp. 2522-2527, Nov. 1982.
Maa et al., J. Vac. Sci. & Tech. A vol. 1, No. 2, pp. 636-637, Apr.-Jun. 1983.

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