Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1986-06-18
1990-05-29
Lacey, David L.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156662, 252 791, 252 794, C09K 1300
Patent
active
049293010
ABSTRACT:
The present invention is directed toward an improved etching solution which is a five component system and does not use ethylene-diamine. This etch will preferentially etch lightly doped, single crystalline silicon at an etch rate of 0.6 microns per minute .+-.0.05 microns per minute and will effectively stop at a selectively doped level in the silicon body being etched because the etch rate of this selectively doped level drops from 0.6 microns per minute to between 0.001 microns per minute and 0.0006 microns per minute. The etch is comprised of ethanol-amine, piperidine, water, pyrocatechol and 30% hydrogen peroxide. The solution preferably consists of 28 mls. ethanol-amine, 2 mls. piperidine, 5.5 mls. water, 5.5 grams pyrocatechol and 0.25 mls. hydrogen peroxide. If desired a trace of a long chain surfactant can be added to the solution.
REFERENCES:
patent: 3457107 (1969-07-01), Mickelson et al.
patent: 3650957 (1972-03-01), Shipley et al.
patent: 3873203 (1975-03-01), Stevenson
patent: 4229979 (1980-10-01), Greenwood
patent: 4293373 (1981-10-01), Greenwood
patent: 4342817 (1982-08-01), Bohlen et al.
patent: 4417946 (1983-11-01), Bohlen et al.
IBM Technical Disclosure Bulletin, vol. 15, No. 1, Jun. 1972, p. 173, "Metallic Free Organic Aluminum Etchant", A. J. Hoeg et al.
IBM Technical Disclosure Bulletin, vol. 19, #10, Mar. 1977, p. 3953, "Anisotropic Etching Solution with High Etch Rate On . . .", E. F. Baran et al.
IBM Technical Disclosure Bulletin, vol. 19, #9, Feb. 1977, p. 3623, "Controlled Anisotropic Etching of Single Crystal Silicon", E. Bassous.
Dang Thi
International Business Machines - Corporation
Lacey David L.
Thornton Francis J.
LandOfFree
Anisotropic etching method and etchant does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Anisotropic etching method and etchant, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropic etching method and etchant will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-518975