Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1987-03-30
1988-11-22
Schor, Kenneth M.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156664, 156656, 156667, 357 71, B44C 122
Patent
active
047863609
ABSTRACT:
A method for anisotropically etching a thick tungsten layer atop a thin underlayer comprised of titanium nitride, by exposure to a gaseous plasma comprised of a binary mixture of chlorine gas and oxygen, wherein oxygen comprises approximately 25%-45% of the mixture by volume. This plasma provides a combination of high tungsten etch rate, highly uniform etching, anisotropic profiles, and high etch rate ratio to underlaying glass passivation layers.
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patent: 4637129 (1987-01-01), Derkits, Jr. et al.
"Blanket CVD Tungsten Interconnect for VLSI Devices," Metha et al., 1986 Proceedings 3rd International IEEE VLSI Multilevel Interconnection Conference, Santa Clara, Calif., Jun. 9-10, 1986, pp. 418-435.
"Selective Dry Etching of Tungsten for VLSI Metallization," Burba et al., Journal of the Electrochemical Society: LSP Solid State Science and Technology, Oct. 1986, pp. 2113-2118.
Cote William J.
Holland Karey L.
Wright Terrance M.
Chadurjian Mark F.
International Business Machines - Corporation
Johnson Lori-ann
Schor Kenneth M.
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