Anisotropic etch method for a sandwich structure

Details Anisotropic etch method for a sandwich structure Anisotropic etch method for a sandwich structure

1990-05-29

1991-05-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156653, 156656, 156657, 1566591, 156662, 20419237, 252 791, 437228, 437233, 437238, 437241, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

050133985

ABSTRACT:
A plasma etch process to anisotropically etch a sandwich structure of silicon dioxide, polycrystalline silicon, and silicon dioxide "in situ", that is, in a single etch chamber. The silicon dioxide is etched using a SF.sub.6 /CHF.sub.3 /He chemistry. The polycrystalline silicon is etched using a HBr/He chemistry. A non-erodible cathode is used. Tungsten silicide may replace the polycrystalline silicon. Silicon nitride may replace the silicon dioxide.

REFERENCES:
patent: 4424621 (1984-01-01), Abbas et al.
patent: 4521448 (1985-06-01), Sasaki
patent: 4528066 (1985-07-01), Merkling et al.
patent: 4818334 (1989-04-01), Shwartzman et al.
patent: 4869781 (1989-09-01), Euen et al.
patent: 4965219 (1990-10-01), Cerofolini

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