Anisotropic etch method

Details Anisotropic etch method Anisotropic etch method

1990-08-27

1993-04-13

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 156653, 156657, H01L 21308

Patent

active

052019934

ABSTRACT:
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step that utilizes C.sub.2 F.sub.6, CF.sub.4, CHF.sub.3 and an inert carrier gas as the etching atmosphere. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal, with no bowing or notching.

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