Anisotropic etch method

Details Anisotropic etch method Anisotropic etch method

1991-01-02

1992-12-01

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156643, 156651, 156662, H01L 2100

Patent

active

051677628

ABSTRACT:
A method to anisotropically etch an oxide/poly/oxide or an oxide/poly/oxide sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step. In the poly removal step, helium is added to improve etch uniformity. The pressure, power, and various gas quantities are balanced to produce the fastest etch rates while preserving selectivity. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal.

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patent: 4799991 (1989-01-01), Dockrey
patent: 4818334 (1989-04-01), Shwartzman et al.
patent: 4855017 (1989-08-01), Douglas
patent: 4886569 (1989-12-01), Ojha et al.
patent: 5007982 (1991-04-01), Tsou
patent: 5013398 (1991-05-01), Long et al.

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