Anisotropic etch method

Details Anisotropic etch method Anisotropic etch method

1989-07-20

1993-12-21

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, H01L 21308

Patent

active

052717992

ABSTRACT:
A method to anisotropically etch an oxide/metalsilicide/polysilicon sandwich structure on a silicon wafer substrate in situ, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a metalsilicide/polysilicon etch step. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal, with no bowing or notching.

REFERENCES:
patent: 4340462 (1982-07-01), Koch
patent: 4414057 (1983-11-01), Bourassa et al.
patent: 4460435 (1984-07-01), Maa
patent: 4473436 (1984-09-01), Beinvogl
patent: 4659426 (1987-04-01), Fuller et al.
patent: 4680086 (1987-07-01), Thomas et al.
patent: 4726879 (1988-02-01), Bondur et al.
patent: 4778563 (1988-10-01), Stone
patent: 4812418 (1989-03-01), Pfiester et al.
patent: 4828649 (1989-05-01), Davis et al.
patent: 4869781 (1989-09-01), Euen et al.
patent: 4894693 (1990-01-01), Tigelaar et al.

Affiliated with

Also associated with

Rating

Anisotropic etch method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anisotropic etch method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropic etch method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-306236