Anisotropic dry etching of Cu-containing layers

Details Anisotropic dry etching of Cu-containing layers Anisotropic dry etching of Cu-containing layers

2007-05-08

2007-05-08

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

Irradiating, ion implanting, alloying, diffusing, or...

C216S078000

Reexamination Certificate

active

10517764

ABSTRACT:
A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with the oxidized Cu (360) to form volatile Cu-containing etch products (390). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist (230, 330).

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