Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-03-25
2008-03-25
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33074
Reexamination Certificate
active
11369895
ABSTRACT:
Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device designed to emit light may include an interface through which emitted light passes therethrough, wherein the interface has a dielectric function that varies spatially according to a pattern. The pattern may be arranged to provide anisotropic light emission characterized by an emission pattern on a far-field projection plane substantially parallel to the interface, wherein a first total light intensity along a first axis on the projection plane is at least 20% greater than a second total light intensity along a second axis on the projection plane. Alternatively, or additionally, the pattern may be arranged to provide anisotropic light emission characterized by a first total light emission on a first plane that is at least 20% greater than a second total light emission on a second plane, wherein the first and second planes are perpendicular to the interface, and wherein the first and second planes are also perpendicular to each other.
REFERENCES:
patent: 3739217 (1973-06-01), Bergh
patent: 4570172 (1986-02-01), Henry et al.
patent: 5073041 (1991-12-01), Rastani
patent: 5132751 (1992-07-01), Shibata et al.
patent: 5162878 (1992-11-01), Sasagawa et al.
patent: 5181220 (1993-01-01), Yagi
patent: 5426657 (1995-06-01), Vakhshoori
patent: 5600483 (1997-02-01), Fan et al.
patent: 5631190 (1997-05-01), Negley
patent: 5779924 (1998-07-01), Krames et al.
patent: 5793062 (1998-08-01), Kish, Jr. et al.
patent: 5955749 (1999-09-01), Joannopoulos et al.
patent: 6091085 (2000-07-01), Lester
patent: 6380551 (2002-04-01), Abe et al.
patent: 6410348 (2002-06-01), Chen
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 6426515 (2002-07-01), Ishikawa et al.
patent: 6469324 (2002-10-01), Wang
patent: 6504180 (2003-01-01), Heremans et al.
patent: 6522063 (2003-02-01), Chen et al.
patent: 6534798 (2003-03-01), Scherer et al.
patent: 6574383 (2003-06-01), Erchak et al.
patent: 6657236 (2003-12-01), Thibeault et al.
patent: 6661028 (2003-12-01), Chen
patent: 6711200 (2004-03-01), Scherer et al.
patent: 6777871 (2004-08-01), Duggal et al.
patent: 6784027 (2004-08-01), Streubel et al.
patent: 6784463 (2004-08-01), Camras et al.
patent: 6791117 (2004-09-01), Yoshitake et al.
patent: 6791119 (2004-09-01), Slater, Jr. et al.
patent: 6803603 (2004-10-01), Nitta et al.
patent: 6831302 (2004-12-01), Erchak et al.
patent: 6847057 (2005-01-01), Gardner et al.
patent: 6878969 (2005-04-01), Tanaka
patent: 6891203 (2005-05-01), Kozawa et al.
patent: 6924163 (2005-08-01), Okazaki et al.
patent: 6956247 (2005-10-01), Stockman
patent: 6958494 (2005-10-01), Lin
patent: 7098589 (2006-08-01), Erchak et al.
patent: 7105861 (2006-09-01), Erchak et al.
patent: 7138666 (2006-11-01), Erchak et al.
patent: 7211831 (2007-05-01), Erchak et al.
patent: 2002/0163947 (2002-11-01), Ostergaard et al.
patent: 2003/0116767 (2003-06-01), Kreissl et al.
patent: 2003/0141507 (2003-07-01), Krames et al.
patent: 2003/0179991 (2003-09-01), Baba et al.
patent: 2003/0222263 (2003-12-01), Choi
patent: 2004/0027062 (2004-02-01), Shiang et al.
patent: 2004/0080926 (2004-04-01), Chen et al.
patent: 2004/0086249 (2004-05-01), Zoorab
patent: 2004/0206962 (2004-10-01), Erchak et al.
patent: 2004/0207320 (2004-10-01), Erchak
patent: 2005/0001957 (2005-01-01), Amimori et al.
patent: 2005/0051787 (2005-03-01), Erchak et al.
patent: 2005/0078241 (2005-04-01), Lee et al.
patent: 2005/0082545 (2005-04-01), Wierer et al.
patent: 2005/0112886 (2005-05-01), Asakawa
patent: 2005/0145864 (2005-07-01), Sugiyama et al.
patent: 2005/0145877 (2005-07-01), Erchak
patent: 2005/0151125 (2005-07-01), Erchak et al.
patent: 2005/0167687 (2005-08-01), Erchak
patent: 2005/0173714 (2005-08-01), Lee et al.
patent: 2005/0205883 (2005-09-01), Wierer
patent: 2005/0211994 (2005-09-01), Erchak
patent: 2006/0027815 (2006-02-01), Wierer
patent: 2006/0204865 (2006-09-01), Erchak et al.
patent: 2007/0085084 (2007-04-01), Erchak et al.
patent: 2007/0085098 (2007-04-01), Erchak et al.
patent: 2007/0087459 (2007-04-01), Erchak et al.
patent: WO 02/41406 (2002-05-01), None
Boroditsky, M., et at., “Light extraction from optically oumped light-emitting diode by thin-slab photonic crystals,”Appl. Phys. Lett., vol. 75., No. 8, pp. 1036-1038 (1999).
Bulu, I., et al., “Highly directive radiaition from sources embedded inside photonic crystals,”Appl. Phys. Lett., vol. 83, No. 16, pp. 3263-3265 (2003).
Cahn, et al., Quasicrystal, 2002, McGraw-Hill, www.accessscience.com.
Chen, L., et al., “Fabrication of 50- 100 nm Patterned InGaN Blue Light Emitting heterostructures,”Phys. Stat. Sol., vol. 188, No. 1, pp. 135-138 (2001).
Erchak, A., et al., “Enhanced coupling to vertical radiation using a two-dimentional photonic crystal in a semiconductor light-emitting diode,”Appl. Phys. Lett., vol. 78, No. 5, pp. 563-565 (2001).
Gourley, P.L., et al., “Optical Bloch waves in a semiconductor photonic lattice,”Appl. Phys. Lett., vol. 60, No. 22, pp. 2714-2716 (1992).
Gourley, P.L., et al., “Optical properties of two-dimentional photonic lattices fabricated as honeycomb nanstructures in compound semiconductors,”Appl. Phys. Lett., vol. 64, No. 6, pp. 687-689 (1994).
International Search Report, from PCT/US2006/040331, mailed Apr. 30, 2007.
Kaliteevski, M., et al., “Two-Dimentional Penrose-Tiled Photonic Quasicrystals: From Diffraction Pattern to Band Structure”, 2000, Nanotechnology 11, pp. 274-280.
Kock, A., et al., “Novel surface emitting GaAs/GlGaAs laser diodes based on surface mode emission,”Appl. Phys. Lett., vol. 63, No. 9, pp. 1164-1166 (1993).
Krames, M., et al., “Introduction to the Issue on High-Efficiency Light-Emitting Diodes,”IEEE Journal, on selected topic in quantum electronics, vol. 8, No. 2, pp. 185-188 (2002).
Lee, Y.J., et al., “A high-ectraction-effiency nanopattern organic light-emitting diode,”Appl. Phys. Lett, vol. 82, No. 21, pp. 3779-3781 (2003).
Oder, T.N., et al., “III-nitride photonic crystals,”Appl. Phys. Lett., vol. 83, No. 6, pp. 1231-1233 (2003).
Office Actions/Responses from U.S. Appl. No. 11/369,894. (2007).
Office Actions/Responses from U.S. Appl. No. 11/370,395. (2007).
Rattier, M., et al., “Omnidirectional and compact guided light extraction from Archimedean photonic lattices,”Appl. Phys. Lett., vol 83, No 7, pp. 1283-1285 (2003).
Schnitzer, I., et al., “30% external quantum effiency from surface textured, thin-film light-emitting diodes,”Appl. Phys. Lett, vol. 63, No. 18, pp. 2174-2176 (1993).
Streubel, K., et al., “High Brightness A1GaInP Light-Emitting Diodes”,IEEE Journal on selected topic in quantum electronic, vol. 8, No. 2, pp. 321-332 (2002).
Wendt, J.R., et al., “Nanofabrication of photonic lattice structures in GaAs/AIGaAs,”J. Vac. Sci. Tech., vol. 11, No. 6, pp. 2637-2640 (1993).
Zelsmann, M., et al., “Seventy-fold enhancement of light extraction from a defectless photonic crystal made on silicon-on-insulators,”Appl. Phys. Lett., vol. 83, No. 13, pp. 2542-2544 (2003).
Erchak Alexei A.
Lidorikis Elefterios
Lim Michael
Nemchuck Nikolay I.
Venezia Jo A.
Dolan Jennifer M.
Jr. Carl Whitehead
Luminus Devices, Inc.
Wolf Greenfield & Sacks P.C.
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